Isolated transformer with integrated shield topology for reduced emi

ABSTRACT

A packaged electronic device includes first conductive leads and second conductive leads at least partially exposed to an exterior of a package structure, and a multilevel lamination structure in the package structure. The multilevel lamination structure includes a first patterned conductive feature having multiple turns in a first level to form a first winding coupled to at least one of the first conductive leads in a first circuit, a second patterned conductive feature having multiple turns in a different level to form a second winding coupled to at least one of the second conductive leads in a second circuit isolated from the first circuit, and a conductive shield trace having multiple turns in a second level spaced apart from and between the first patterned conductive feature and the second patterned conductive feature, the conductive shield trace coupled in the first circuit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of co-pending application Serial No.16/800,043 filed Jul. 29, 2020, which claims priority to, and thebenefit of, U.S. Provisional Pat. Application No. 62/810,812, entitled“Isolated Transformer with Integrated Shield Topology for Reduced EMI”,filed on Feb. 26, 2019, the entirety of both of which is herebyincorporated by reference.

BACKGROUND

Integrated isolated power products are packaged electronic deviceshaving semiconductor dies and integrated transformers with electricalconnections to externally accessible leads (e.g., pins or pads) forsoldering to a printed circuit board (PCB). Isolated DC to DC converterscan be built using integrated high voltage isolation transformers, therethe transformer coils can be fabricated in a lamination structure forintegration in a packaged electronic device. Many DC to DC convertershave design specifications for electromagnetic interference (EMI), suchas CISPR32 and CISPR25 EMI emission requirements for multimediaequipment (MME) with a rated rms AC or DC supply voltage not exceeding600 V set by the Comité International Spécial des PerturbationsRadioélectriques (CISPR). Switching of primary and/or secondary sidetransistors in a DC to DC converter can cause conducted and/or emittedEMI, for example, there the transformer of an isolated DC to DCconverter can be a path of electromagnetic energy due to itsinter-winding capacitance. EMI can be controlled using ferrite beads,additional capacitors, or other external (e.g., board level) components,but this increases circuit area, weight and cost. In addition, eachdesign has different specifications with respect to electric fields,efficiency and electromagnetic interference (EMI) performance. Other EMIcontrol approaches include spread spectrum modulation (SSM) forcontrolling the DC to DC converter switching, but this requiresadditional die space and often only provides incremental EMIimprovement.

SUMMARY

In accordance with one aspect, a packaged electronic device includesconductive leads at least partially exposed to an exterior of a packagestructure, second conductive leads at least partially exposed to theexterior of the package structure, and a multilevel lamination structurein the package structure. The multilevel lamination structure includesfirst and second patterned conductive feature, and a conductive shieldtrace. The first patterned conductive feature has multiple turns in afirst level of the multilevel lamination structure to form a firstwinding coupled to at least one of the first conductive leads in a firstcircuit. The second patterned conductive feature has multiple turns in adifferent level to form a second winding coupled to at least one of thesecond conductive leads in a second circuit isolated from the firstcircuit. The conductive shield trace has multiple turns in a secondlevel spaced apart from and between the first patterned conductivefeature and the second patterned conductive feature. The conductiveshield trace is coupled in the first circuit.

In one example, the multilevel lamination structure includes a secondconductive shield trace having multiple turns in another level betweenthe first patterned conductive feature and the second patternedconductive feature. The second conductive shield trace is coupled in thesecond circuit, and the second conductive shield trace is spaced apartfrom the first conductive shield trace. In one example, the firstconductive shield trace is coupled to a ground reference node of thefirst circuit, and the second conductive shield trace is coupled to asecond ground reference node of the second circuit. The shield orshields can be peripherally located with respect to the patternedconductive features in certain implementations. In one example, thefirst conductive shield trace includes a turn laterally spaced outwardfrom an outermost lateral extent of the first patterned conductivefeature in the first level, and the second conductive shield traceincludes a turn laterally spaced outward from an outermost turn of thesecond patterned conductive feature in the different level. In certainimplementations, the shield or shields can be interleaved with thepatterned conductive features. In one example, the first conductiveshield trace is interleaved with a turn of the first patternedconductive feature in the first level, and the second conductive shieldtrace is interleaved with a turn of the second patterned conductivefeature in the different level.

In accordance with another aspect, a multilevel lamination structureincludes a first patterned conductive feature having multiple turns in afirst level to form a first winding, as well as a second patternedconductive feature having multiple turns in a different level to form asecond winding, and a conductive shield trace having multiple turns in asecond level spaced apart from and between the first patternedconductive feature and the second patterned conductive feature. In oneexample, the multilevel lamination structure further includes a secondconductive shield trace having multiple turns in another level betweenthe first patterned conductive feature and the second patternedconductive feature. In one example, the first conductive shield traceincludes a turn laterally spaced outward from an outermost lateralextent of the first patterned conductive feature in the first level, andthe second conductive shield trace includes a turn laterally spacedoutward from an outermost turn of the second patterned conductivefeature in the different level. In one example, the first conductiveshield trace is interleaved with a turn of the first patternedconductive feature in the first level, and the second conductive shieldtrace is interleaved with a turn of the second patterned conductivefeature in the different level.

In accordance with another aspect, a method includes attaching amagnetic assembly with a multilevel lamination structure to a supportstructure, attaching a first semiconductor die to a first die attachpad, and attaching a second semiconductor die to a second die attachpad, as well as performing an electrical connection process and amolding process. The electrical connection process couples the firstsemiconductor die, a first winding of the multilevel laminationstructure, a first conductive shield trace of the multilevel laminationstructure, and at least one of a set of first conductive leads in afirst circuit. In addition, the electrical connection process couplesthe second semiconductor die, a second winding of the multilevellamination structure, a second conductive shield trace of the multilevellamination structure, and at least one a set of second conductive leadsin a second circuit isolated from the first circuit. The molding processencloses the magnetic assembly, the die attach pads, the semiconductordies, portions of the first and second conductive leads in a packagestructure. In one example, the electrical connection process couples thefirst conductive shield trace to a ground reference node of the firstcircuit, and couples the second conductive shield trace to a secondground reference node of the second circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a bottom view of a packaged electronic device that includes amagnetic assembly having conductive shield traces.

FIG. 2 is a partial sectional end view of the packaged electronic devicetaken along line 2-2 of FIG. 1 .

FIG. 3 is a partial sectional end elevation view of the packagedelectronic device taken along line 3-3 of FIG. 1 .

FIG. 4 is a partial sectional end view of the packaged electronic devicetaken along line 4-4 of FIG. 1 .

FIG. 5 is a top view of the packaged electronic device of FIGS. 1-4 .

FIG. 6 is a bottom perspective view of the packaged electronic device ofFIGS. 1-5 .

FIG. 7 is a flow diagram of a method of fabricating a packagedelectronic device.

FIGS. 8-13 are partial sectional end elevation views of the packagedelectronic device of FIGS. 1-6 undergoing fabrication according to themethod of FIG. 7 .

FIG. 14 is a bottom view of the multilevel lamination structure of thepackaged electronic device of FIGS. 1-6 with first and second windingsand first and second conductive shield traces.

FIG. 15 is a bottom view of the magnetic assembly of the packagedelectronic device of FIGS. 1-6 with the multilevel lamination structureof FIG. 14 and upper and lower cores.

FIG. 16 is a partial sectional end view of one embodiment of themagnetic assembly taken along line 16-16 of FIG. 15 .

FIG. 17 is a partial sectional end view of another embodiment of themagnetic assembly taken along line 16-16 of FIG. 15 .

FIG. 18 is a partial sectional end view of a third embodiment of themagnetic assembly taken along line 16-16 of FIG. 15 .

FIG. 19 is a partial sectional end view of a fourth embodiment of themagnetic assembly taken along line 16-16 of FIG. 15 .

FIG. 20 is a partial sectional end view of a fifth embodiment of themagnetic assembly taken along line 16-16 of FIG. 15 .

FIG. 21 is a partial sectional end view of a sixth embodiment of themagnetic assembly taken along line 16-16 of FIG. 15 .

FIG. 22 is a partial sectional end view of a seventh embodiment of themagnetic assembly taken along line 16-16 of FIG. 15 .

FIG. 23 is a schematic diagram of an embodiment of the packagedelectronic device of FIGS. 1-6 with a first conductive shield tracecoupled to a first ground reference node of the first circuit.

FIG. 24 is a schematic diagram of another embodiment of the packagedelectronic device of FIGS. 1-6 with a second conductive shield tracecoupled to a second ground reference node of the second circuit.

FIG. 25 is a schematic diagram of another embodiment of the packagedelectronic device of FIGS. 1-6 with first and second conductive shieldtraces coupled to the respective first and second ground reference nodesof the first and second circuits.

DETAILED DESCRIPTION

In the drawings, like reference numerals refer to like elementsthroughout, and the various features are not necessarily drawn to scale.In the following discussion and in the claims, the terms “including”,“includes”, “having”, “has”, “with”, or variants thereof are intended tobe inclusive in a manner similar to the term “comprising”, and thusshould be interpreted to mean “including, but not limited to...” Also,the term “couple” or “couples” is intended to include indirect or directelectrical or mechanical connection or combinations thereof. Forexample, if a first device couples to or is coupled with a seconddevice, that connection may be through a direct electrical connection,or through an indirect electrical connection via one or more interveningdevices and connections.

Referring initially to FIGS. 1-6 , described examples provide packagedelectronic devices with integrated magnetics, such as DC to DCconverters with integrated isolation transformers, having one or moreconductive shield traces to mitigate or control EMI emissions. The EMIsolutions of the illustrated examples provide advantages in terms of EMIreduction over SSM, and provide circuit area, weight and cost advantagesover use of additional board level components such as ferrite beadsand/or additional capacitors. The use of a transformer with integratedshield technology allows end users to reduce EMI without the need ofdiscrete ferrite beads that add cost to the solution and withoutrequiring EMI reduction expertise to design a system using the packagedelectronic device. Asymmetrical voltages across an isolation barrierimpedance of a DC to DC converter can create emissions through the twoisolated ground planes becoming a dipole antenna and radiating noise.FIGS. 1-6 show an example packaged electronic device 100 with alaminated magnetic assembly having conductive shield traces betweenwindings of different voltage domains, such as primary and secondarytransformer windings.

The conductive shield trace solution can be used in products havingsymmetric or asymmetric magnetic assembly positioning and provides ascalable solution to accommodate designs with differing electric field,efficiency and/or EMI performance specifications. The conductive shieldtrace solution can be used with a magnetic assembly mounted with asemiconductor die to a shared die attach pad as shown in FIGS. 1-6 , orthe magnetic assembly can be separately supported on a conductivesupport structure spaced apart from integrated semiconductor dies andassociated conductive die attach pads. Conductive shield traces can beprovided in one or more layers or levels of the multilevel laminationstructure. FIG. 1 shows a bottom view of the example device 100, andFIGS. 2-4 show partial sectional and elevation views along therespective lines 2-2, 3-3, and 4-4 in FIG. 1 . FIG. 5 shows a top view,and FIG. 6 shows a bottom perspective view of the packaged electronicdevice 100.

The example electronic device 100 has a small outline integrated circuit(SOIC) package type with gull wing leads on opposite sides. Otherpackaged electronic devices can be provided in differentimplementations, including conductive features that can be soldered toanother structure or structures for electrical interconnections, such asso called leadless package types (e.g., flat no-leads packages such asquad-flat no-leads (QFN), dual-flat no-leads (DFN), micro lead frame(MLF) and small-outline no leads (SON) types with planar conductiveleads such as perimeter lands on the package bottom and/or side thatprovide electrical connections to a printed circuit board (PCB). Inother examples, the device 100 includes a ball grid array (BGA) packageor a land grid array (LGA) type, such as a mold array process ball gridarray (MAPBGA) or an over-molded BGA (e.g. plastic BGA or PBGA).

In addition, the example device 100 of FIGS. 1-6 provides electricalinterconnections for first and second electrical circuits, some or allof which are implemented using bond wires. In other implementations,different forms of interconnection types can be used, includingsubstrate based interconnections (BGA, LGA, etc.), and which a substrateincludes electrical interconnections and signal routing structures(e.g., copper or aluminum traces on one or more layers or levels) aloneor in combination with bond wire electrical connections. As shown inFIG. 1 , the example device 100 includes conductive features (e.g.,conductive die attach pads or supports) for mounting and supportingfirst and second semiconductor dies and a laminated magnetic assembly.The die attach pads and device leads can include any suitable conductivestructures, such as copper, aluminum, etc.

The example device 100 in FIG. 1 includes a first semiconductor die 102attached to a first conductive die attach pad 104 of the lead frameassembly. The device 100 also includes a second semiconductor die 106attached to a second conductive die attach pad 108. The electronicdevice 100 includes a first circuit (e.g., 161, labeled “CIRCUIT 1” inFIG. 1 ) associated with a first voltage domain (e.g., a high voltageprimary circuit of an integrated power device). The device 100 alsoincludes a second circuit (e.g., 162, labeled “CIRCUIT 2”) associatedwith a second voltage domain (e.g., an isolated lower voltage secondarycircuit). The second circuit 162 in this example includes a secondarywinding formed by a second patterned conductive feature 109 (alsoreferred to as a second winding) of a magnetic assembly 110. Thelaminated magnetic assembly 110 includes a first patterned conductivefeature 111 (also referred to as a first winding) in a multilevellamination structure 112. In the illustrated example, the multilevellamination structure 112 includes multiple conductive features that formprimary and secondary windings of a transformer. The first patternedconductive feature 111 has multiple turns in a first level (e.g., FIGS.16-18 below) to form the first winding (e.g., a primary winding of anisolation transformer). The multilevel lamination structure 112 includesa second patterned conductive feature 109 having multiple turns in adifferent level to form a second winding (e.g., a transformer secondarywinding). The multilevel lamination structure 112 also includes aconductive guard trace 113 spaced apart from the first patternedconductive feature 111 and positioned between an outermost turn of thefirst conductive feature 111 and a side of the device 100 associatedwith the second voltage domain. This helps keep high electric fieldsassociated with the first and second domain voltage differences betweenthe first (e.g., primary) winding and the leads of the second (e.g.,secondary) circuit inside the lamination structure 112. In otherimplementations, the guard trace 113 can be omitted.

The example multilevel lamination structure 112 includes a firstconductive shield trace 111S with multiple turns in a second levelbetween the first patterned conductive feature 111 and the secondpatterned conductive feature 109. The conductive shield trace 111S iscoupled in the first circuit 161. The example multilevel laminationstructure 112 in FIGS. 1-6 also includes a second conductive shieldtrace 109S with multiple turns in another level between the firstpatterned conductive feature 111 and the second patterned conductivefeature 109. In the example of FIGS. 1-6 , the second conductive shieldtrace 109S is coupled to the conductive guard trace 113 in the secondcircuit 162. In another example, the second conductive shield trace 109Sis omitted.

The magnetic assembly 110 also includes one or more core structures tofacilitate forming a magnetic circuit in combination with the patternedconductive feature 111. The illustrated example includes a first (loweror bottom) core structure 114 as seen in FIGS. 1, 2, 5 and 6 . The firstcore structure 114 is attached to a first side of the laminationstructure 112. The electronic device 100 includes electrical connectionssuch as bond wires 115, 116, 117, 118, and 119 that form electricalinterconnections between certain components and leads. The packagedelectronic device 100 also includes a package structure 120 thatencloses the conductive die attach pads 104 and 108, the semiconductordies 102 and 106, the magnetic assembly 110, and all or portions ofconductive leads of the device 100. In one example, the packagestructure 120 is or includes a molded material, such as plastic. Inanother example, the package structure 120 is or includes a ceramicmaterial.

The magnetic assembly 110 also includes a second (upper or top) corestructure 121 (seen in FIGS. 1, 2, 5 and 6 ). The first core structure114 is attached to a first side of the lamination structure 112, and thesecond core structure 121 is attached to a second side of the laminationstructure 112. In one example, the first magnetic core structure 114 isthe same size as the second core structure 121. In another example, thefirst magnetic core structure 114 is larger than the second corestructure 121. In another example, the first magnetic core structure 114is smaller than the second core structure 121. In one example, one orboth magnetic core structures 114 and 121 are prefabricated magneticcores attached using epoxy paste. In another example, one or bothmagnetic core structures 114 and 121 are fabricated using a thick layerof magnetic paste. The laminated magnetic assembly 110 is attached to asupport structure 122 that is integral to the second conductive dieattach pad 108. In another implementation, the magnetic assembly 110 ismounted to a support structure (not shown) that is separated and spacedapart from the first and second die attach pads 104 and 108.

A first set of the electrical connections includes a first set of bondwires 115 and 116 that couple the first conductive shield trace 111S (ifincluded), the first semiconductor die 102, the first patternedconductive feature 111, and at least one of a set of first conductiveleads 124-131 in the first (e.g., high voltage primary) circuit 161 ofthe device 100. As best shown in FIG. 1 , the first conductive dieattach pad 104 is directly coupled to a single first lead 125. In otherexamples, the first die attach pad 104 is directly coupled to multipleconductive first leads. In the example device 100, the die attach pad104 and the lead 125 are a single continuous metal structure, such ascopper or aluminum. A first bond wire 115 couples a conductive feature(e.g., bond pad) of the first semiconductor die 102 to the first lead126, and bond wires 116 couple further bond pads of the firstsemiconductor die 102 to first and second ends of the first patternedconductive feature 111, and also couple a ground reference node of thefirst semiconductor die 102 to the first conductive shield trace 111S.

A second set of electrical connections in this example includes a secondset of bond wires 117, 118 and 119 that couple the second conductiveshield trace 109S (if included), the second semiconductor die 106, thesecond patterned conductive feature 109, the conductive guard trace 113(if included), and at least one of a set of second conductive leads132-139 in the second circuit 162 (e.g., a lower voltage secondarycircuit) that is isolated from the first circuit 161. The secondconductive die attach pad 108 is directly coupled to a single lead 138,and the connected support structure 122 is directly connected to asingle lead 132. In other examples, the second die attach pad 108 and/orthe support structure 122 is/are directly coupled to multiple conductiveleads. In the example device 100, the second die attach pad 108, thesupport structure 122, and the leads 132 and 138 are a single continuousmetal structure, such as copper or aluminum. A bond wire 117 couples abond pad of the second semiconductor die 106 to the second lead 137.Bond wires 118 couple further bond pads of the second semiconductor die106 to first and second ends of the second patterned conductive feature.In addition, bond wires 119 couple the second semiconductor die 106 tothe second conductive shield trace 109S and to the conductive guardtrace 113.

As best shown in FIGS. 2-4 and 6 , the package structure 120 enclosesthe die attach pads 104 and 108, and the associated support structure122. In addition, the package structure 120 encloses inner portions ofthe conductive leads 124-139. The conductive leads 124-139 in oneexample are so-called gull wing leads that extend downward and outwardfrom the package structure 120 as shown in FIGS. 2-4 and 6 . Differenttypes and shapes of conductive leads are used in other examples (e.g., Jleads). FIGS. 2-4 show respective sectional views of the packagedelectronic device 100 taken along lines 2-2, 3-3, and 4-4 of FIGS. 1 and5 . As best shown in FIGS. 2-4 , the example package structure 120includes a top side 211 and an opposite bottom side 212.

The multilevel lamination structure 112 has a first side 141 facing thefirst conductive leads 124-131, and a second side 142 facing the secondconductive leads 132-139. In this orientation, the conductive guardtrace 113 is spaced apart from and between the first winding formed bythe first patterned conductive feature 111 and the second conductiveleads 132-139. The package structure 120 has respective first and secondsides 151 and 152 spaced apart from one another along a first direction(e.g., the X direction in FIGS. 1-6 ). The first conductive leads124-131 are located along, and extend outward from, the first side 151of the package structure 120, and the second conductive leads 132-139are located along, and extend outward from, the second side 152 of thepackage structure 120. The conductive guard trace 113 is spaced apartfrom and between the first patterned conductive feature 111 and thesecond side 152 of the package structure 120. As shown in FIGS. 1 and 6, the conductive guard trace 113 has a length 143 along a perpendicularsecond direction (e.g., the Y direction in FIGS. 1-6 ), and outermostturn of the first patterned conductive feature 111 has a shorter length144 along the second direction.

In operation of the electronic device 100, the voltage of the firstpatterned conductive feature 111 can be much higher than the voltage ofthe second conductive leads 132-139 along the second side 152 of thepackage structure 120. Interior portions of the second conductive leads132-139 are enclosed by the molding compound or ceramic material of thepackage structure 120, which has a lower dielectric constant than thatof the lamination layers or levels of the multilevel laminationstructure 112. Moreover, the external portions of the second conductiveleads 132-139 are exposed to ambient air, which has a lower dielectricconstant than those of the package structure 120 and the multilevellamination structure 112. The longer length and positioning of theconductive guard trace 113 within the multilevel lamination structure112 helps keep the high electric field in the high dielectric materialof the multilevel lamination structure 112 to mitigate or avoid arcingduring production testing and normal operation of the packagedelectronic device 100.

FIG. 7 shows a method 700 for fabricating a packaged electronic device,such as the device 100 of FIGS. 1-6 , and FIGS. 8-13 show the examplepackaged electronic device 100 undergoing fabrication according to themethod 700. The method 700 includes fabricating a laminated magneticassembly with a conductive shield trace at 701. In certainimplementations, the magnetic assembly is separately assembled andprovided as an input to the method 700. In the illustrated example, themagnetic assembly fabrication at 701 includes attaching a bottommagnetic core (e.g., sheet) on a back side of a multilevel laminationstructure at 702. FIG. 8 shows one example, in which an attachmentprocess 800 is performed that attaches the first (lower or bottom) corestructure 114 to a bottom side of the example multilevel laminationstructure 112.

The multilevel lamination structure 112 can be any suitable multi-layerlamination with patterned conductive features 109 and 111, such astransformer windings, and a conductive guard trace 113. The patternedconductive features 109, 111 and 113 can be created by any suitableprocessing, such as screen-printing conductive material onto a laminatelayer. The multilevel lamination structure 112 can include one or morebonding steps to bond laminate layers or sheets to one another to formthe multilevel lamination structure 112. In one example, the laminationstructure levels individually include a bismaleimide triazine (BT)laminate layer, and one, some or all the levels include patternedconductive features (e.g., copper or other electrically conductivematerial), such as traces forming windings or turns of windings. In someexamples, the multilevel lamination structure 112 is built up layer bylayer, for example, starting with a central or middle dielectric layer(e.g., a core dielectric layer), and each layer is added with anypatterned copper conductive features and conductive vias to interconnectconductive features of different levels, to form a multilevel laminationstructure 112. For high voltage isolation, the individual levels of themultilevel lamination structure 112 are or include high pressure BTlaminate materials, which provide high voltage breakdown strength andcan be pre-impregnated with a resin, such as epoxy resin. The individualBT laminate levels can be assembled using any suitable adhesive with anyrequired curing, such as curing by a combination of heat and pressure.

The core structure 114 in one example is a magnetic sheet structure,although not required of all possible implementations. The attachmentprocess 800 can include deposition of an epoxy or other adhesive ontothe bottom surface of the multilevel lamination structure 112 and/oronto the surface of the core structure 114. The adhesive in one exampleis printed magnetic ink epoxy, although non-magnetic adhesives can beused in other examples. The attachment process 800 also includesbringing the core structure 114 into contact with the bottom side of themultilevel lamination structure 112 and/or into contact with the epoxyformed thereon. The attachment process 800 in one example also includesany necessary curing steps (e.g., thermal, optical, ultraviolet (UV),etc.).

The method 700 continues at 704 with attaching a top magnetic core(e.g., sheet) on the front side of the lamination structure. FIG. 9shows one example, in which a second attachment process 900 is performedthat attaches the second (upper or top) core structure 121 to a secondside of the lamination structure 112. The attachment process 900 can bethe same or similar process as the first attachment process 800 used toattach the first core structure 114 to the lamination structure 112. Therespective upper and lower core structures 121 and 114 are attached tothe multilevel lamination structure 112 by epoxy or other suitableattachment structures and/or techniques to form a magnetically coupledtransformer apparatus. In other examples, one of the upper or lower corestructures 121 or 114 can be omitted, with the remaining core structureproviding magnetic coupling for the transformer of the device 100.

The method 700 further includes separating (e.g., singulating) themagnetic assembly at 706. In one example, the magnetic assembly processis used to concurrently fabricate multiple laminated magneticassemblies, such as using a single large multilevel lamination structure112, and attachment of one or more core structures 114, 121 to oppositesides thereof. FIG. 10 shows one example in which such a largelamination structure 112 is diced or cut to singulate or separateindividual laminated magnetic assemblies 110 from the initial unitarystructure. A singulation process 1000 is performed in the example ofFIG. 10 , which singulates or separates multiple laminated magneticassemblies 110 from a starting unitary structure, for example, using asaw blade, etching, laser cutting, etc.

At 708, the magnetic assembly 110 is attached to the support structure122. The attachment at 708 in one implementation includes attaching themagnetic assembly 110 to the support structure 122 with the first side141 of the multilevel lamination structure 112 facing the firstconductive leads 124-131, and with the second side 142 of the multilevellamination structure 112 facing the second conductive leads 132-139. Theattachment at 708 in this example also includes orienting the magneticassembly 110 such that the conductive guard trace 113 (if included) isspaced apart from and between the first winding 111 of the multilevellamination structure 112 and the second conductive leads 132-139.

In one example, a lead frame structure is provided that includesconductive leads (e.g., 124-139 in FIGS. 1-6 above) and conductive dieattach pads 104 and 108. In one implementation, the lead frame structureis provided on a tacky tape or other adhesive carrier, with the variousconstituent structures assembled in a predetermined relative arrangementto facilitate subsequent assembly steps in the method 700. FIG. 11 showsone example, in which an attachment process 1100 is performed thatattaches the multilevel lamination structure 112 of the magneticassembly 110 to a corresponding surface of the support structure 122.Any suitable attachment process 1100 can be used, such as application ofadhesive, joining the components, and any necessary curing. In anotherexample, conductive features of the multilevel lamination structure 112can be soldered to the support structure 122 at 708.

The process 700 continues at 710 and 712 in FIG. 7 with attachingsemiconductor dies to corresponding die attach pads, for example, usingadhesive or soldering. FIG. 12 shows one example in which a die attachprocess 1200 is performed that attaches the first semiconductor die 102to the first die attach pad 104 (e.g., where the die attach pad 104 isone continuous conductive structure that includes the lead 125). At 712,the process 1200 also attaches the second semiconductor die 106 to thecorresponding second die attach pad 108 (e.g., one continuous conductivestructure that also includes the lead 138).

The method 700 also includes electrical connection processing (e.g.,wire bonding) at 714. FIG. 13 shows one example in which a wire bondingprocess 1300 is performed that forms connections (e.g., bond wires115-119 in FIGS. 1-6 above) between the semiconductor dies and one ormore conductive leads and/or conductive features of the magneticassembly 110 to form first and second circuits 161 and 162. In theillustrated sectional view of FIG. 13 , the connection process 1300includes forming the first bond wire connection 115 between a firstconductive feature of the first semiconductor die 102 and the conductivelead 126, and forming a bond wire connection 117 between a firstconductive feature of the second semiconductor die 106 and theconductive lead 137. In another example, different electricalconnections are formed to create the first circuit 161, such asflip-chip processing to interconnect solder balls, conductive pillars,bond pads, etc. of the structures together in an electrical circuit. Theelectrical connection process 1300 couples the first semiconductor die102, the first winding 111 of the multilevel lamination structure 112,the first conductive shield trace 111S of the multilevel laminationstructure 112, and at least one of the set of first conductive leads124-131 in the first circuit 161.

In addition, the electrical connection process 1300 couples the secondsemiconductor die 106, the second winding 109 of the multilevellamination structure 112, the second conductive shield trace 109S, andat least one a set of second conductive leads 132-139 in a secondcircuit isolated from the first circuit. In one example, the electricalconnection process 1300 couples the second conductive shield trace 109Sto any included conductive guard trace 113. In one example, theelectrical connection process 1300 couples the first conductive shieldtrace 111S to a ground reference node of the first circuit 161, andcouples the second conductive shield trace 109S to a second groundreference node of the second circuit 162 (e.g., FIG. 23 below). Furtherconnections can be made at 714 for a particular design, for example, toform the bond wires 115-119 shown in FIGS. 1-6 .

In one example, the wire bonding process 1300 couples the firstconductive shield trace 111S of the multilevel lamination structure 112to the first circuit 161. In one implementation, the wire bondingprocess 1300 couples the second conductive shield trace 109S of themultilevel lamination structure 112 to the second circuit 162. In oneexample, moreover, the wire bonding process 1300 couples the conductiveguard trace 113 to the second conductive shield trace 109S of themultilevel lamination structure 112. In another example, differentelectrical connections are formed to create the first circuit 161, suchas flip-chip processing to interconnect solder balls, conductivepillars, bond pads, etc. of the structures together in a secondelectrical circuit. In certain examples, the wire bonding or otherinterconnection processing at 714 can be performed using supportingstructures to provide mechanical structural support for one or morefeatures of the magnetic assembly 110 during bond wire attachment. Inone example, one or both magnetic core structures 114 and 121 can besupported with a custom bond wire clamping tool (not shown) during bondwire soldering operations. In one example, the bond wire clamping toolcan include a cavity to support the laminate bond pad area that extendsbeyond the supported magnetic core structure.

The method 700 continues at 716 with forming the final package structure120. In one example, the packaging at 716 includes performing a moldingprocess (not shown) that forms the package structure 120 to enclose thedies 102 and 106, the conductive die attach pads 104 and 108, thesupport structure 122, the magnetic assembly 110, the electricalconnections (e.g., the bond wires 115-119) and portions of theconductive leads 124-139. FIGS. 1-6 above show an example molded plasticpackage structure 120 formed at 716 in FIG. 7 . In another example, aceramic package structure can be formed at 716. At 718 in FIG. 7 ,further backend processing can be performed, such as lead forming andtrimming, etc.

FIGS. 14-18 show further details of the example multilevel laminationstructure 112. FIG. 14 shows a bottom view of the multilevel laminationstructure 112 with first and second windings and a conductive guardtrace, and FIG. 15 shows a bottom view of the magnetic assembly 110 withthe multilevel lamination structure 112 and the respective upper andlower cores 114 and 121 attached. FIGS. 16-18 show partial sectional endviews of three different embodiments of the magnetic assembly 110 takenalong line 16-16 of FIG. 15 . The multilevel lamination structure 112 isa multilayer structure with patterned conductive features 109, 109S,111, 111S and 113 that form parts of a transformer. In one example, thefirst patterned conductive feature 111 forms a transformer primarywinding, a second patterned conductive feature 109 forms a transformersecondary winding. In one example, further patterned conductive featuresform one or more second secondary windings, one or more conductive(e.g., Faraday) shields, one or more sense coils, along with one or moreconductive shield traces, and the conductive guard trace 113.

The patterned conductive features in one example have components onmultiple levels (e.g., layers) of the multilevel lamination structure112, although not required of all possible implementations. In oneexample, the patterned winding turns of the individual primary and/orsecondary windings extend on different layers of the multilevellamination structure 112, although not required of all possibleimplementations. The example patterned winding features include multipleturns in a spiral pattern on the individual layers of the multilevellamination structure 112, although other implementations are possible,such as single turn winding structures on a corresponding layer. Theexample patterned conductive features forming the transformer windings109 and 111, shields 109S and 111S, and the guard trace 113 includeconductive end connection features allowing interconnection of thewindings to pins or semiconductor dies of the device 100, such as forbond wire connections 115-119 or other conductive interconnection types(e.g., solder balls, not shown) in the packaged electronic device 100.The semiconductor dies 102 and 106 include pillars, solder bumps,conductive landing pads or other conductive features (e.g., bond pads)that can be electrically interconnected to other structures using bondwires 115-119 or through direct soldering using any suitable electricalinterconnection technology (e.g., wire bonding, flip-chip attachment,.etc.) .

FIGS. 16-18 show outer portions of example implementations of themultilevel lamination structure 112, with inner or central portionsomitted for clarity. As shown in FIGS. 16-18 , the multilevel laminationstructure 112 has the first side 141 and the opposite second side 142spaced from one another along the X-direction, and a Z-direction stackof levels (e.g., layers) 1601-1607. The multilevel lamination structure112 has a third side 1613 attached to the core 121 and a fourth side1614 attached to the core 114 and spaced apart from the third side 1613along the Z-direction. The first patterned conductive feature 111includes multiple turns in a first level 1601 to form the first winding,and the second patterned conductive feature 109 has multiple turns intwo different levels 1606 and 1607 to form the second winding. Thesecond conductive shield 109S in this example is formed in a fifth level1605, and the levels 1603 and 1604 form an isolation barrier between theprimary and secondary circuits. In the example of FIG. 16 , theconductive guard trace 113 and the first conductive shield 111S areformed in a second level 1602, where the conductive guard trace 113 isspaced apart from and between the first patterned conductive feature 111and the second side 142 of the multilevel lamination structure 112. FIG.17 shows another example, in which the conductive guard trace 113 isformed in the first level 1601, spaced apart from and between the firstpatterned conductive feature 111 and the second side 142 of themultilevel lamination structure 112. In the example of FIG. 18 , theconductive guard trace 113 is formed in the respective first and secondlevels 1601 and 1602, and the conductive guard trace 113 is spaced apartfrom and between the first patterned conductive feature 111 and thesecond side 142 of the multilevel lamination structure 112.

The first conductive shield trace 111S in the examples of FIGS. 16-18has multiple turns in the second level 1602 spaced apart from andbetween the first patterned conductive feature 111 and the secondpatterned conductive feature 109. In these examples, the secondconductive shield trace 109S has multiple turns in another level 1605between the first patterned conductive feature 111 and the secondpatterned conductive feature 109. In addition, the second conductiveshield trace 109S is spaced apart from the conductive shield trace 111S.In alternate implementations, the guard trace 113 can be omitted fromthe examples of FIGS. 16-18 . The embodiments of FIGS. 16-18 providedual shield implementations with respective first and second shields111S and 109S for the primary and secondary circuits 161 and 162.

Referring also to FIGS. 19-22 , several further shield trace examplesare shown. FIG. 19 shows a partial sectional end view of a fourthembodiment of the magnetic assembly 110 taken along line 16-16 of FIG.15 . This example is a single shield with the second conductive shieldtrace 109S coupled in the second (e.g., secondary) circuit 162 in thefifth level 1605 spaced apart from and between the turns of therespective first and second conductive traces 109 and 111 along the Zdirection. In this example, the secondary coil traces 109 extend in therespective sixth and seventh levels 1606 and 1607. The second conductiveshield trace 109S has turns in the fifth level 1605 that are spacedapart from and generally coextensive with the secondary coil traces 109.

FIG. 20 shows a dual shield example of the magnetic assembly 110 takenalong line 16-16 of FIG. 15 . This example provides dual peripheralshield traces 109S and 111S along with peripheral shield traces in therespective levels of the respective first and second conductive traces109 and 111. This example further includes the guard trace 113 in thesecond level 1602, which can be omitted in another implementation. Inthe example of FIG. 20 , the conductive shield trace 111S includes aturn laterally spaced outward along the X direction from the outermostlateral extent of the first patterned conductive feature 111 in thefirst level 1601. As shown in FIG. 20 , the first and second conductivetraces 109 and 111 occupy a central portion of the magnetic assembly 110along a lateral width dimension 2001, and the peripheral turns of theconductive shield traces 109S and 111S are spaced by a non-zero distance2002 from the outermost lateral extent of the patterned conductivefeatures 111 and 109. The second conductive shield trace 109S in thisexample includes a turn laterally spaced outward from the outermost turnof the second patterned conductive feature 109 in the levels 1605 and1606. In this implementation, the peripheral turns of the conductiveshield traces 109S and 111S face each other across a dielectric of thelevels 1603, 1604 and 1605, and form one or more parasitic capacitors2000 as shown in FIG. 20 . As schematically shown in FIG. 25 below, theparasitic capacitor or capacitors 2000 (CP) facilitate EMI reduction byproviding a capacitive impedance between the isolated first and secondcircuits 161 and 162. Moreover, the example of FIG. 20 providesinterleaved shield traces, in which the second conductive shield trace109S in the sixth level 1606 is interleaved with a turn of the secondpatterned conductive feature 109.

FIG. 21 shows a sixth embodiment of the magnetic assembly 110 takenalong line 16-16 of FIG. 15 . This example also provides an interleavedshield trace configuration, in which turns of both the second patternedconductive feature 109 and the second conductive shield trace 109S areformed in the fifth and seventh levels 1605 and 1607. The examplemagnetic assembly 110 of FIG. 22 provides interleaved peripheralshields, and which the first and second levels 1601 and 1602 bothinclude turns of the first patterned conductive feature 111 as well asthe first conductive shield trace 111S. In addition, the laminationstructure levels 1605, 1606 and 1607 each include turns of both thesecond patterned conductive feature 109 and the second conductive shieldtrace 109S. In addition, like the example of FIG. 20 above, theconductive shield traces 111S and 109S each include a turn laterallyspaced outward from the outermost turn of the respective patternedconductive features 111 and 109 in the second and fifth levels 1602 and1605 to provide one or more corresponding parasitic capacitors 2000.

FIGS. 23-25 illustrate three example electrical interconnections of thefirst and second circuits 161 and 162. FIG. 23 provides a schematicdiagram 2300 showing one example with a first conductive shield trace111S coupled to a first ground reference node of the first circuit 161.As schematically shown in FIG. 23 , the first conductive shield trace111S extends between the first and second conductive features 111 and109 that form the primary and secondary windings of the transformer. Theschematic diagram 2300 of FIG. 23 also shows example circuit componentsof the first and second circuits 161 and 162. In this implementation, aninput voltage source 2302 provides an input voltage VIN to an input node2304 referenced to a ground reference node 2306 of the first circuit161. An input capacitor CI is coupled between the input node 2304 andthe first ground reference node 2306. A cross-coupled pair of PMOStransistors 2311 and 2312 have sources coupled to the input node 2304,and drains coupled to opposite ends of the primary winding 111 (the endsof the first patterned conductive feature 111). Switched NMOStransistors 2313 and 2314 are respectively coupled between the drains ofthe respective transistors 2311 and 2312, and the first ground referencenode 2306. The secondary circuit 162 provides an output voltage VO at anoutput terminal 2324 reference to a second ground reference node 2326 ofthe second circuit 162. An output capacitor CO is coupled across theterminals 2324 and 2326. The second circuit 162 also includes across-coupled pair of PMOS transistors 2331 and 2332 individuallycoupled between the output node 2324 and a respective and of thesecondary winding 109 (the second patterned conductive feature 109).NMOS transistors 2333 and 2334 are individually coupled between thedrains of the respective PMOS transistors 2331 and 2332, and the secondground reference node 2326.

FIG. 24 shows a schematic diagram 2400 of another embodiment of thepackaged electronic device of FIGS. 1-6 with a second conductive shieldtrace 109S coupled to the second ground reference node 2326 of thesecond circuit 162. FIGS. 23 and 24 provide single shieldinterconnections of the first and second circuits 161 and 162, with aground referenced shield between the primary and secondary windings 111and 109 for EMI control or reduction. In one simulated example, theprovision of the single sided faraday shield in FIGS. 23 or 24 providesan EMI reduction of 3-5 dB.

FIG. 25 shows a schematic diagram 2500 of a dual shield embodiment ofthe packaged electronic device of FIGS. 1-6 with first and secondconductive shield traces 111S and 109S position between the primary andsecondary windings 111 and 109. In addition, the dual shield traces 111Sand 109S in FIG. 25 provide a parasitic capacitor CP (e.g., capacitors2000 in FIGS. 20 and 22 above) coupled to the respective first andsecond ground reference nodes 2306 and 2326 of the first and secondcircuits 161 and 162. In this implementation, the first conductiveshield trace 111S is coupled to the ground reference node 2306 of thefirst circuit 161, and the second conductive shield trace 109S iscoupled to the second ground reference node 2326 of the second circuit162. In one simulated example, the dual faraday shield in FIG. 25provides an EMI emissions reduction of approximately 10-12 dB.

The described examples provide integrated magnetics for packagedelectronic devices with integral EMI reduction features with no increasein cost and no external circuits or components for isolated DC to DCconverters or other applications. In addition, the EMI reduction isindependent of design expertise for end-use customers, as no additionalboard level circuit components are needed. In various implementations,conductive shield traces are patterned on one or more levels of themultilevel lamination structure 112, and these can be connected to theassociated first or second circuit, such as to ground reference nodesthereof, during wire bonding or other electrical interconnectionprocessing in fabrication. Various implementations provide single layershields between transformer coils, dual shields positioned between orperipherally to the transformer coils, for example, to create one ormore parasitic capacitors, as well as interleaved shields. In operation,the interleaved shield examples provide an interim option between thebest EMI reduction performance of the dual shield configurations and thesingle shield examples that provide high coupling. Shield coils incertain examples can be positioned around a power coil. In otherimplementations, the conductive shield traces provide block capacitorshields. The block capacitor shields form plates of a capacitor indifferent levels, that are separated by one or more dielectric layers,where the respective capacitor plates are connected to respective onesof the first and second circuits, and where the capacitor platestructures may, but need not, form a turn around the power coil, inorder to address near field emissions by adding capacitance (e.g.,capacitors 2000 in FIGS. 20 and 22 above). The described examples alsoprovide package level solutions to address electromagnetic interferenceand can be used alone or in combination with external circuit componentsand/or silicon-based solutions like SSM. The described examples,moreover, provide integrated EMI solutions independent of siliconprocess node and/or system-level board designs.

Modifications are possible in the described embodiments, and otherembodiments are possible, within the scope of the claims.

1-18.
 19. A method for fabricating an electronic device, the methodcomprising: attaching a magnetic assembly with a multilevel laminationstructure to a support structure; attaching a first semiconductor die toa first die attach pad; attaching a second semiconductor die to a seconddie attach pad; performing an electrical connection process that:couples the first semiconductor die, a first winding of the multilevellamination structure, a first conductive shield trace of the multilevellamination structure, and at least one of a set of first conductiveleads in a first circuit; and couples the second semiconductor die, asecond winding of the multilevel lamination structure, a secondconductive shield trace of the multilevel lamination structure, and atleast one a set of second conductive leads in a second circuit isolatedfrom the first circuit; and performing a molding process that enclosesthe magnetic assembly, the die attach pads, the semiconductor dies,portions of the first and second conductive leads in a packagestructure.
 20. The method of claim 19, wherein the electrical connectionprocess couples the first conductive shield trace to a ground referencenode of the first circuit, and couples the second conductive shieldtrace to a second ground reference node of the second circuit.
 21. Amethod for fabricating an electronic device, comprising: exposing firstconductive leads to an exterior of a package structure; exposing secondconductive leads to the exterior of the package structure; placing amultilevel lamination structure in the package structure, the multilevellamination structure including: a first patterned conductive featurehaving multiple turns in a first level to form a first winding coupledto at least one of the first conductive leads in a first circuit; asecond patterned conductive feature having multiple turns in a differentlevel to form a second winding coupled to at least one of the secondconductive leads in a second circuit isolated from the first circuit;and a conductive shield trace having multiple turns in a second levelspaced apart from and between the first patterned conductive feature andthe second patterned conductive feature, the conductive shield tracecoupled in the first circuit.
 22. The method of claim 21, furthercomprising: attaching a first semiconductor die to a first die attachpad at least partially in the package structure; attaching a secondsemiconductor die to a second die attach pad at least partially in thepackage structure; forming a first set of electrical connections thatcouple the first semiconductor die, the first patterned conductivefeature, the conductive shield trace, and the at least one of the firstconductive leads in the first circuit; and forming a second set ofelectrical connections that couple the second semiconductor die, thesecond patterned conductive feature, and the at least one of the secondconductive leads in the second circuit.
 23. The method of claim 22,wherein the multilevel lamination structure includes a second conductiveshield trace having multiple turns in another level between the firstpatterned conductive feature and the second patterned conductivefeature, the second conductive shield trace being coupled in the secondcircuit, and the second conductive shield trace being spaced apart fromthe conductive shield trace.
 24. The method of claim 23, wherein: theconductive shield trace is coupled to a ground reference node of thefirst circuit; and the second conductive shield trace is coupled to asecond ground reference node of the second circuit.
 25. The method ofclaim 23, wherein: the conductive shield trace includes a turn laterallyspaced outward from an outermost lateral extent of the first patternedconductive feature in the first level; and the second conductive shieldtrace includes a turn laterally spaced outward from an outermost turn ofthe second patterned conductive feature in the different level.
 26. Themethod of claim 25, wherein: the conductive shield trace is interleavedwith a turn of the first patterned conductive feature in the firstlevel; and the second conductive shield trace is interleaved with a turnof the second patterned conductive feature in the different level. 27.The method of claim 23, wherein: the conductive shield trace isinterleaved with a turn of the first patterned conductive feature in thefirst level; and the second conductive shield trace is interleaved witha turn of the second patterned conductive feature in the differentlevel.
 28. The method of claim 21, wherein the conductive shield traceincludes a turn laterally spaced outward from an outermost lateralextent of the first patterned conductive feature in the first level. 29.The method of claim 21, wherein the conductive shield trace isinterleaved with a turn of the first patterned conductive feature in thefirst level.
 30. The method of claim 21, wherein: the first conductiveleads are positioned along a first side of a package structure; and thesecond conductive leads are positioned along a different second side ofthe package structure.
 31. The method of claim 21, further includingattaching a core structure to a side of the lamination structureadjacent the first level.
 32. The method of claim 31, further includingattaching a second core structure to a different second side of thelamination structure adjacent the different level.
 33. The method ofclaim 21, further including a positioning a conductive guard trace,spaced apart from the first patterned conductive feature, between anoutermost turn of the first conductive feature and a side of themultilevel lamination structure.
 34. The method of claim 21, furtherincluding placing a second conductive shield trace with multiple turnsin another level between the first patterned conductive feature and thesecond patterned conductive feature.
 35. The method of claim 21, furtherincluding placing a second conductive shield trace with multiple turnsin another level between the first patterned conductive feature and thesecond patterned conductive feature.
 36. The method of claim 23, whereinthe second conductive shield trace is coupled to the conductive guardtrace.
 37. The method of claim 21, further including adding one or morestructures for facilitating forming a magnetic circuit in combinationwith the first patterned conductive feature.
 38. The method of claim 21,further including attaching a core structure to a first side of themultilevel lamination structure.
 39. The method of claim 21, furtherincluding attaching a core structure to a second side of the multilevellamination structure.
 40. The method of claim 21, further includingattaching a first core structure to a first side of the multilevellamination structure and attaching a second core structure to a secondside of the multilevel lamination structure.
 41. The method of claim 40,wherein the first core structure and the second core structure are thesame size.
 42. The method of claim 40, wherein the first core structureand the second core structure are different sizes.
 43. The method ofclaim 40, wherein the first core structure, the second core structureand the multilevel lamination structure comprise a magnetic assembly.44. The method of claim 22, further including attaching a first corestructure to a first side of the multilevel lamination structure andattaching a second core structure to a second side of the multilevellamination structure.
 45. The method of claim 32, wherein the first corestructure and the second core structure are one of the same size anddifference sizes.
 46. The method of claim 32, wherein the first corestructure and the second core structure are different sizes.
 47. Thepackaged electronic device of claim 32, wherein the first corestructure, the second core structure and the multilevel laminationstructure comprise a magnetic assembly.